to-220f plastic-encapsulate mosfets CJPF05N60 n-channel power mosfet description this advanced high voltage mosfet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a drain-to-source diode with fast recovery time. designed for high voltage, high speed switching applications such as power suplies, converters , power motor controls and bridge circuits. features z low r ds(on) z lower capacitances z lower total gate charge z tighter v sd specifications z avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 gate-source voltage v gs 30 v continuous drain current i d 4.5 a single pulsed avalanche energy (note1) e as 2 5 0 mj power dissipation (note 2 ,t a =25 ) 2 maximum power dissipation (note 3 ,t c =25 ) p d 120 w thermal resistance from junction to ambient r ja 62.5 /w junction temperature t j 150 storage temperature t stg -50 ~+150 1. gate 2. drain 3. source 123 to-220f 1.gate 3.source 2.drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 600 gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v gate-body leakage current (note 4) i gss v ds =0v, v gs =30v 100 na zero gate voltage drain current i dss v ds =600v, v gs =0v 1 a drain-source on-state resistance r ds(on) v gs =10v, i d =2.25a 2.5 ? input capacitance c iss 670 output capacitance c oss 72 reverse transfer capacitance c rss v ds =25v,v gs =0v, f =1mhz 8.5 pf turn-on delay time (note 4) t d (on) 30 rise time (note 4) t r 90 turn-off delay time (note 4) t d(off) 85 fall time (note 4) t f v dd =300v, i d =4.5a, r g =25 ? 100 ns forward on voltage (note 4) v sd v gs =0v, i s =4.5a 1.4 v notes: 1. e as condition: t j =25 , v dd =50v,r g =25 ? ,l= 16 mh,i as =5a 2. this test is performed with no heat sink at t a =25 . 3. this test is performed with infinite heat sink at t c =25 . 4. pulse test : pulse width 300s, duty cycle 2 %. forward transconductance g fs v ds = 4 0v, i d =2 .25 a 2.9 s 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
012345 0 1 2 3 4 0.0 0.3 0.6 0.9 1.2 1.5 0.01 0.1 1 10 024681 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 024681 01 2 0 3 6 9 12 15 0 5 10 15 20 25 30 0 2 4 6 8 10 t a =25 pulsed ?? drain current i d (a) on-resistance r ds(on) ( ) r ds(on) i d v gs =10v i s ?? v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) CJPF05N60 t a =25 pulsed i d =2.25a ?? v gs r ds(on) on-resistance r ds(on) ( ) gate to source voltage v gs (v) drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed output characteristics v gs =20v,10v,5.5v v gs =5.2v v gs =5v v gs =4.8v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
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